MAGNETIC MEMORY DEVICE
PROBLEM TO BE SOLVED: To provide a magnetic memory device (MRAM) which is improved in reliability in writing operation.SOLUTION: The magnetic memory device includes: a plurality of magnetic resistance elements; a memory cell array having a plurality of bit lines and a plurality of word lines to each...
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| Format | Patent |
| Language | English Japanese |
| Published |
21.12.2017
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| Online Access | Get full text |
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| Abstract | PROBLEM TO BE SOLVED: To provide a magnetic memory device (MRAM) which is improved in reliability in writing operation.SOLUTION: The magnetic memory device includes: a plurality of magnetic resistance elements; a memory cell array having a plurality of bit lines and a plurality of word lines to each of which the plurality of magnetic resistance elements are connected; and a control circuit connected to the memory cell array for applying a writing voltage to the plurality of bit lines according to magnetic characteristics of the plurality of magnetic resistance elements.SELECTED DRAWING: Figure 7
【課題】書き込み動作における信頼性を向上させた磁気メモリ装置（ＭＲＡＭ）を提供する。【解決手段】実施形態の磁気メモリ装置は、複数の磁気抵抗素子と、前記複数の磁気抵抗素子がそれぞれ接続された複数のビット線及び複数のワード線を有するメモリセルアレイと、前記メモリセルアレイに接続され、前記複数の磁気抵抗素子の磁気特性に応じて前記複数のビット線に書き込み電圧を印加する制御回路と、を具備する。【選択図】図７ |
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| AbstractList | PROBLEM TO BE SOLVED: To provide a magnetic memory device (MRAM) which is improved in reliability in writing operation.SOLUTION: The magnetic memory device includes: a plurality of magnetic resistance elements; a memory cell array having a plurality of bit lines and a plurality of word lines to each of which the plurality of magnetic resistance elements are connected; and a control circuit connected to the memory cell array for applying a writing voltage to the plurality of bit lines according to magnetic characteristics of the plurality of magnetic resistance elements.SELECTED DRAWING: Figure 7
【課題】書き込み動作における信頼性を向上させた磁気メモリ装置（ＭＲＡＭ）を提供する。【解決手段】実施形態の磁気メモリ装置は、複数の磁気抵抗素子と、前記複数の磁気抵抗素子がそれぞれ接続された複数のビット線及び複数のワード線を有するメモリセルアレイと、前記メモリセルアレイに接続され、前記複数の磁気抵抗素子の磁気特性に応じて前記複数のビット線に書き込み電圧を印加する制御回路と、を具備する。【選択図】図７ |
| Author | NOMA KENJI KOBAYASHI SHINYA MIYATA MIKIO |
| Author_xml | – fullname: MIYATA MIKIO – fullname: KOBAYASHI SHINYA – fullname: NOMA KENJI |
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| DocumentTitleAlternate | 磁気メモリ装置 |
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| Notes | Application Number: JP20160119866 |
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| RelatedCompanies | TOSHIBA MEMORY CORP |
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| Snippet | PROBLEM TO BE SOLVED: To provide a magnetic memory device (MRAM) which is improved in reliability in writing operation.SOLUTION: The magnetic memory device... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
| Title | MAGNETIC MEMORY DEVICE |
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