ETCHANT, ETCHING DEVICE, AND ETCHING METHOD USED IN PHOTOELECTROCHEMICAL ETCHING OF SILICON CARBIDE (SiC) SUBSTRATE

PROBLEM TO BE SOLVED: To provide an etchant for photoelectrochemical etching of a silicon carbide (SiC) substrate, capable of increasing an etching rate.SOLUTION: An etchant for photoelectrochemical etching of a silicon carbide substrate contains a hydrofluoric acid (HF) and a nitric acid (HNO).SELE...

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Bibliographic Details
Main Authors OZAWA TAKAHIRO, SAITO TOMOMI, NAKAJIMA KENJI, ISHII EIKO
Format Patent
LanguageEnglish
Japanese
Published 30.11.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide an etchant for photoelectrochemical etching of a silicon carbide (SiC) substrate, capable of increasing an etching rate.SOLUTION: An etchant for photoelectrochemical etching of a silicon carbide substrate contains a hydrofluoric acid (HF) and a nitric acid (HNO).SELECTED DRAWING: Figure 2 【課題】エッチング速度の向上が可能な炭化ケイ素（ＳｉＣ）基板の光電気化学用エッチング液を提供する。【解決手段】炭化ケイ素基板の光電気化学エッチングに用いるエッチング液であって、フッ酸（ＨＦ）と、硝酸（ＨＮＯ３）とを含む、エッチング液。【選択図】図２
Bibliography:Application Number: JP20160102723