STANDARD SAMPLE WITH INCLINED SUPPORT TABLE, METHOD FOR EVALUATING SCAN TYPE ELECTRON ELECTROSCOPE AND METHOD OF EVALUATING SIC SUBSTRATE
PROBLEM TO BE SOLVED: To provide a standard sample for objectively evaluating the quality of a scan type electron microscope with a configuration capable of exerting its performance even when an off angle is large.SOLUTION: A standard sample 41 has a step/terrace structure formed of single crystal S...
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Main Authors | , , |
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Format | Patent |
Language | English Japanese |
Published |
02.11.2017
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a standard sample for objectively evaluating the quality of a scan type electron microscope with a configuration capable of exerting its performance even when an off angle is large.SOLUTION: A standard sample 41 has a step/terrace structure formed of single crystal SiC, and the surface of each terrace has either a first lamination orientation or a second lamination orientation. Further, when an angle at which an electron beam applied from the scan type electron microscope intersects to a vertical line on the surface of the terrace is defined as an incident electron angle, the standard sample 41 is a sample in which the contrast defined as the difference in light-and-dark between an image of the terrace of the second lamination orientation just below the surface and an image of the terrace of the second lamination orientation just below the surface varies according to the incident electron angle. Even when the SiC substrate has an off angle (for example, from 1° to 8°), it is possible to obtain a sharp contrast reflecting the difference between the first lamination orientation and the second lamination orientation just below the surface can be obtained irrespective of the off angle by using an inclined support table 20a enabling correction of the off angle.SELECTED DRAWING: Figure 10
【課題】走査型電子顕微鏡の品質を客観的に評価するための標準試料において、オフ角が大きい場合であっても性能を発揮可能な構成を提供する。【解決手段】標準試料41は、単結晶SiCからなるステップ/テラス構造が形成されており、それぞれのテラスの表面は、第1積層配向又は第2積層配向の何れかである。また、テラスの表面の垂直線に対して、走査型電子顕微鏡から照射される電子線がなす角度を入射電子角度としたときに、この標準試料41は、表面直下の第1積層配向のテラスの映像と、表面直下の第2積層配向のテラスの映像と、の明暗の差であるコントラストが入射電子角度に応じて変化する。SiC基板がオフ角度(例えば1°から8°)を有する場合においても、当該オフ角度を補正可能とする傾斜支持台20aを使用することでオフ角度によらず、表面直下の第1積層配向と第2積層配向の差を反映した鮮明なコントラストが得られる。【選択図】図10 |
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Bibliography: | Application Number: JP20160089094 |