PHOTODETECTOR AND LIDAR APPARATUS USING THE SAME
PROBLEM TO BE SOLVED: To provide a photodetector with a high detection sensitivity of light in a near infrared wavelength band, and a lidar apparatus using the photodetector.SOLUTION: A photodetector according to an embodiment comprises: a first semiconductor layer; a porous semiconductor layer disp...
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Main Authors | , , , , , |
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Format | Patent |
Language | English Japanese |
Published |
14.09.2017
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a photodetector with a high detection sensitivity of light in a near infrared wavelength band, and a lidar apparatus using the photodetector.SOLUTION: A photodetector according to an embodiment comprises: a first semiconductor layer; a porous semiconductor layer disposed on the first semiconductor layer; and at least one optical detection element having a second semiconductor layer of a first conductivity type disposed on a region of a part of the porous semiconductor layer, and a third semiconductor layer of a second conductivity type disposed on the second semiconductor layer.SELECTED DRAWING: Figure 1
【課題】近赤外の波長帯域の光の検出感度が高い光検出器およびこれを用いたライダー装置を提供する。【解決手段】本実施形態による光検出器は、第1半導体層と、前記第1半導体層に配置された多孔質半導体層と、前記多孔質半導体層の一部の領域に配置された第1導電型の第2半導体層と、前記第2半導体層上に配置された第2導電型の第3半導体層と、を有する少なくとも1つの光検出素子と、を備えている。【選択図】図1 |
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Bibliography: | Application Number: JP20160047460 |