SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

• Main Authors: BABA MASANOBU, ISHIZUKI MEGUMI, SUDO TAKESHI, KAWAI BURANDO, IGUCHI SUNAO
• Format: Patent
• Language: English; Japanese
• Published: 27.07.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of suppressing increase in number of processes when forming a step-like structure part.SOLUTION: According to an embodiment, a semiconductor device manufacturing method comprises: a step of forming a laminate in which a plurality of components and a plurality of intermediates having a material different from that of the plurality of components are laminated one after the other; a step of sequentially processing ends of at least two layers of the plurality of components in the lamination direction to form step-like level differences where the plurality of components and the plurality of intermediates are laminated; a step of forming a plurality of sidewall films which contact the level differences; and a step of making the ends of the plurality of components be step-like. The process of making the ends of the plurality of components be step-like includes a step of setting back portions out of the plurality of components, which are separated from the plurality of sidewall films and exposed from the laminate.SELECTED DRAWING: Figure 1 【課題】階段構造部を形成するときの工程数の増加を抑制できる半導体装置の製造方法を提供する。【解決手段】実施形態によれば、半導体装置の製造方法は、複数の部材と、前記複数の部材とは異なる材料を有する複数の中間体と、が交互に積層された積層体を形成する工程と、少なくとも２層の前記複数の部材の端部を、前記積層方向に順次加工し、前記複数の部材と、前記複数の中間体と、が積層された階段状の段差を形成する工程と、前記段差に接する複数の側壁膜を形成する工程と、前記複数の部材の端部を階段状にする工程と、を備える。前記複数の部材の端部を階段状にする工程は、前記複数の部材のうち、前記複数の側壁膜と離間し、前記積層体から露出する部分を後退させる工程を含む。【選択図】図１