III-N TEMPLATE

PROBLEM TO BE SOLVED: To provide a template including a heterogeneous substrate, and a III-N crystal grown on the heterogeneous substrate by a CVD method, which is a template free from crack generation or a crystal defect caused by controlling exogenous and endogenous stress received by the III-N cr...

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Main Authors FRANK LIPSKI, FERDINAND SCHOLZ, MARTIN KLEIN, HABEL FRANK
Format Patent
LanguageEnglish
Japanese
Published 20.07.2017
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Abstract PROBLEM TO BE SOLVED: To provide a template including a heterogeneous substrate, and a III-N crystal grown on the heterogeneous substrate by a CVD method, which is a template free from crack generation or a crystal defect caused by controlling exogenous and endogenous stress received by the III-N crystal during crystal growth and after cooling.SOLUTION: There is provided a template in which a III-N crystal is grown on a sapphire substrate, while observing a curvature change of the template, by adjusting a specific parameter such as a temperature, a mask layer or a thickness of the grown crystal during crystal growth.SELECTED DRAWING: None 【課題】異種基板と、異種基板上にCVD法により成長させたIII−N結晶とを含むテンプレートであって、結晶成長中および冷却後にIII−N結晶が受ける外因性および内因性応力を制御することにより得られる亀裂発生や結晶欠陥のないテンプレートの提供。【解決手段】結晶成長中に温度、マスク層、成長結晶の厚みなど、特定のパラメーターを調節することによって、テンプレートの曲率の変化を観察しながらサファイア基板上へIII−N結晶を成長させたテンプレート。【選択図】なし
AbstractList PROBLEM TO BE SOLVED: To provide a template including a heterogeneous substrate, and a III-N crystal grown on the heterogeneous substrate by a CVD method, which is a template free from crack generation or a crystal defect caused by controlling exogenous and endogenous stress received by the III-N crystal during crystal growth and after cooling.SOLUTION: There is provided a template in which a III-N crystal is grown on a sapphire substrate, while observing a curvature change of the template, by adjusting a specific parameter such as a temperature, a mask layer or a thickness of the grown crystal during crystal growth.SELECTED DRAWING: None 【課題】異種基板と、異種基板上にCVD法により成長させたIII−N結晶とを含むテンプレートであって、結晶成長中および冷却後にIII−N結晶が受ける外因性および内因性応力を制御することにより得られる亀裂発生や結晶欠陥のないテンプレートの提供。【解決手段】結晶成長中に温度、マスク層、成長結晶の厚みなど、特定のパラメーターを調節することによって、テンプレートの曲率の変化を観察しながらサファイア基板上へIII−N結晶を成長させたテンプレート。【選択図】なし
Author HABEL FRANK
FRANK LIPSKI
MARTIN KLEIN
FERDINAND SCHOLZ
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Snippet PROBLEM TO BE SOLVED: To provide a template including a heterogeneous substrate, and a III-N crystal grown on the heterogeneous substrate by a CVD method,...
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SourceType Open Access Repository
SubjectTerms AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
CRYSTAL GROWTH
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Title III-N TEMPLATE
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