III-N TEMPLATE
PROBLEM TO BE SOLVED: To provide a template including a heterogeneous substrate, and a III-N crystal grown on the heterogeneous substrate by a CVD method, which is a template free from crack generation or a crystal defect caused by controlling exogenous and endogenous stress received by the III-N cr...
Saved in:
Main Authors | , , , |
---|---|
Format | Patent |
Language | English Japanese |
Published |
20.07.2017
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | PROBLEM TO BE SOLVED: To provide a template including a heterogeneous substrate, and a III-N crystal grown on the heterogeneous substrate by a CVD method, which is a template free from crack generation or a crystal defect caused by controlling exogenous and endogenous stress received by the III-N crystal during crystal growth and after cooling.SOLUTION: There is provided a template in which a III-N crystal is grown on a sapphire substrate, while observing a curvature change of the template, by adjusting a specific parameter such as a temperature, a mask layer or a thickness of the grown crystal during crystal growth.SELECTED DRAWING: None
【課題】異種基板と、異種基板上にCVD法により成長させたIII−N結晶とを含むテンプレートであって、結晶成長中および冷却後にIII−N結晶が受ける外因性および内因性応力を制御することにより得られる亀裂発生や結晶欠陥のないテンプレートの提供。【解決手段】結晶成長中に温度、マスク層、成長結晶の厚みなど、特定のパラメーターを調節することによって、テンプレートの曲率の変化を観察しながらサファイア基板上へIII−N結晶を成長させたテンプレート。【選択図】なし |
---|---|
AbstractList | PROBLEM TO BE SOLVED: To provide a template including a heterogeneous substrate, and a III-N crystal grown on the heterogeneous substrate by a CVD method, which is a template free from crack generation or a crystal defect caused by controlling exogenous and endogenous stress received by the III-N crystal during crystal growth and after cooling.SOLUTION: There is provided a template in which a III-N crystal is grown on a sapphire substrate, while observing a curvature change of the template, by adjusting a specific parameter such as a temperature, a mask layer or a thickness of the grown crystal during crystal growth.SELECTED DRAWING: None
【課題】異種基板と、異種基板上にCVD法により成長させたIII−N結晶とを含むテンプレートであって、結晶成長中および冷却後にIII−N結晶が受ける外因性および内因性応力を制御することにより得られる亀裂発生や結晶欠陥のないテンプレートの提供。【解決手段】結晶成長中に温度、マスク層、成長結晶の厚みなど、特定のパラメーターを調節することによって、テンプレートの曲率の変化を観察しながらサファイア基板上へIII−N結晶を成長させたテンプレート。【選択図】なし |
Author | HABEL FRANK FRANK LIPSKI MARTIN KLEIN FERDINAND SCHOLZ |
Author_xml | – fullname: FRANK LIPSKI – fullname: FERDINAND SCHOLZ – fullname: MARTIN KLEIN – fullname: HABEL FRANK |
BookMark | eNrjYmDJy89L5WTg8_T01PVTCHH1DfBxDHHlYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBobmhkYmlmYWjsZEKQIAslwfCQ |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | III−Nテンプレート |
ExternalDocumentID | JP2017124968A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_JP2017124968A3 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 12:55:22 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English Japanese |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_JP2017124968A3 |
Notes | Application Number: JP20170009080 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170720&DB=EPODOC&CC=JP&NR=2017124968A |
ParticipantIDs | epo_espacenet_JP2017124968A |
PublicationCentury | 2000 |
PublicationDate | 20170720 |
PublicationDateYYYYMMDD | 2017-07-20 |
PublicationDate_xml | – month: 07 year: 2017 text: 20170720 day: 20 |
PublicationDecade | 2010 |
PublicationYear | 2017 |
RelatedCompanies | FREIBERGER COMPOUND MATERIALS GMBH |
RelatedCompanies_xml | – name: FREIBERGER COMPOUND MATERIALS GMBH |
Score | 3.2169826 |
Snippet | PROBLEM TO BE SOLVED: To provide a template including a heterogeneous substrate, and a III-N crystal grown on the heterogeneous substrate by a CVD method,... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
Title | III-N TEMPLATE |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170720&DB=EPODOC&locale=&CC=JP&NR=2017124968A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQSTNKM04ySTHXTUm2TNU1SUo1101KNTLWtbQwNjRNBdYPRqmg8Q5fPzOPUBOvCNMIJoZs2F4Y8Dmh5eDDEYE5KhmY30vA5XUBYhDLBby2slg_KRMolG_vFmLrogbtHRuaG5gbGai5ONm6Bvi7-DurOTvbegWo-QWB5UD3LJtZODIzsALb0eag7OAa5gTallKAXKe4CTKwBQCNyysRYmDKShRm4HSGXb0mzMDhC53xBjKhma9YhIHP09NT108hxNU3wMcxxFWUQcnNNcTZQxdocDzcG_FeAUiOMBZjYAH271MlGBRMDFPNDVOMU4BVfZIJsLmfZJ4KumUv0SItxczcwNRAkkEaj0FSeGWlGbhAPNBgpJGBDANLSVFpqiywFi1JkgP7HgCZsXI0 |
link.rule.ids | 230,309,783,888,25576,76876 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_mFOeDoNOhzo8h0rdiv9M9FNn6QVvbrkiVvY1lTUEFHa7iv-8ldLqnvYUcHEngl9_dJXcHcFdplU6NksjlYshkgzIiU6bp8tDWVZMhP2iMxzvSzAqfjXhqTlvwvs6FEXVCf0RxRETUAvFei_t6-R_E8sTfytU9fcWpz4egcDyp8Y5VohBNkbyx4-cTb-JKruvEuZQ9CRnvs2zZox3YRRubcDj4L2OelrLc5JTgCPZyVPdRH0Prbd6FjrtuvdaF_bR58cZhA77VCRxGUSRng8JP82RU-KdwG_iFG8qoePa3jVmcbyxC70Eb_Xt2BgNDZUQt9RKpnhpo7lPCeJe9uV2VFlFM5Rz6WxRdbJXeQCcs0mSWRNljHw64hAcmNeUS2vXXN7tCRq3ptTiJXx7TdSc |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=III-N+TEMPLATE&rft.inventor=FRANK+LIPSKI&rft.inventor=FERDINAND+SCHOLZ&rft.inventor=MARTIN+KLEIN&rft.inventor=HABEL+FRANK&rft.date=2017-07-20&rft.externalDBID=A&rft.externalDocID=JP2017124968A |