SEMICONDUCTOR DEVICE

• Main Authors: SUZUKI TAKUMA, UEHARA JUNICHI
• Format: Patent
• Language: English; Japanese
• Published: 23.03.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device which inhibits deterioration in reliability caused by film peeling of an electrode.SOLUTION: A semiconductor device comprises: a silicon carbide layer 10 having a first surface 14 and a second surface 12 provided on the opposite side of the first surface 14; a first insulation film 40 provided on the first surface 14; a first electrode 34 provided on the first insulation film 40; a first conductivity type first silicon carbide region 10b which is provided in the silicon carbide layer 10 and partially provided on the first surface; a second conductivity type second silicon carbide region 20 which is provided in the first silicon carbide region 10b and partially provided on the first surface 14; a first conductivity type third silicon carbide region 22 which is provided in the second silicon carbide region 14 and partially provided on the first surface; a third electrode 30 which is provided on the second surface 12 and contains metal, silicon and carbide; and a third electrode 32 which is provided in contact with the third silicon carbide region 22 and contains metal, silicon and carbide, and has a carbon concentration higher than that of the second electrode 30.SELECTED DRAWING: Figure 1 【課題】電極の膜はがれによる信頼性低下が抑制された半導体装置を提供する。【解決手段】第１の面１４と、第１の面１４の反対側に設けられた第２の面１２と、を有する炭化珪素層１０と、第１の面１４上に設けられた第１の絶縁膜４０と、第１の絶縁膜４０上に設けられた第１の電極３４と、炭化珪素層１０内に設けられ、一部が第１の面に設けられた第１導電型の第１の炭化珪素領域１０ｂと、第１の炭化珪素領域１０ｂ内に設けられ、一部が第１の面１４に設けられた第２導電型の第２の炭化珪素領域２０と、第２の炭化珪素領域１４内に設けられ、一部が第１の面に設けられた第１導電型の第３の炭化珪素領域２２と、第２の面１２に設けられ、金属とシリコンと炭素を含む第２の電極３０と、第３の炭化珪素領域２２と接して設けられ、金属とシリコンと炭素を含み、炭素濃度が第２の電極３０より高い第３の電極３２と、を備える。【選択図】図１