SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of achieving a normally-off operation while suppressing a decrease in drain current due to current collapse and an increase in gate leakage current, and a method of manufacturing the same.SOLUTION: A semiconductor device 1 includes: a c...

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Bibliographic Details
Main Authors IMAI AKIFUMI, NANJO TAKUMA, YAGYU EIJI
Format Patent
LanguageEnglish
Japanese
Published 09.02.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device capable of achieving a normally-off operation while suppressing a decrease in drain current due to current collapse and an increase in gate leakage current, and a method of manufacturing the same.SOLUTION: A semiconductor device 1 includes: a channel layer 13 provided on a substrate and formed of a single-crystal nitride semiconductor; a barrier layer 14 provided on the channel layer 13 and containing an amorphous nitride semiconductor; a source electrode 16 and a drain electrode 17 provided on the barrier layer 14 separately from each other; an insulating film 18 provided on the barrier layer 14; and a gate electrode 20 provided on the insulating film 18.SELECTED DRAWING: Figure 1 【課題】電流コラプスによるドレイン電流の減少、およびゲートリーク電流の増加を抑制しながら、ノーマリオフ型の動作を実現することができる半導体装置およびその製造方法を提供する。【解決手段】半導体装置１は、基板上に設けられた単結晶の窒化物半導体から成るチャネル層１３と、チャネル層１３上に設けられ、アモルファスの窒化物半導体を含むバリア層１４と、バリア層１４上に互いに離隔して設けられるソース電極１６およびドレイン電極１７と、バリア層１４上に設けられた絶縁膜１８と、絶縁膜１８上に設けられたゲート電極２０とを備える。【選択図】図１
Bibliography:Application Number: JP20150155701