NON-VOLATILE MEMORY WITH ADJUSTABLE CELL BIT SHAPE

• Main Authors: RUBIN KURT A, LUIZ M FRANCA-NETO
• Format: Patent
• Language: English; Japanese
• Published: 19.01.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

PROBLEM TO BE SOLVED: To provide non-volatile memory with an adjustable cell bit shape.SOLUTION: Embodiments of the present disclosure generally relate to non-volatile memory and, in particular, non-volatile memory with adjustable cell bit shapes. In one embodiment, an adjustable memory cell is prov...