NON-VOLATILE MEMORY WITH ADJUSTABLE CELL BIT SHAPE

PROBLEM TO BE SOLVED: To provide non-volatile memory with an adjustable cell bit shape.SOLUTION: Embodiments of the present disclosure generally relate to non-volatile memory and, in particular, non-volatile memory with adjustable cell bit shapes. In one embodiment, an adjustable memory cell is prov...

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Bibliographic Details
Main Authors RUBIN KURT A, LUIZ M FRANCA-NETO
Format Patent
LanguageEnglish
Japanese
Published 19.01.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:PROBLEM TO BE SOLVED: To provide non-volatile memory with an adjustable cell bit shape.SOLUTION: Embodiments of the present disclosure generally relate to non-volatile memory and, in particular, non-volatile memory with adjustable cell bit shapes. In one embodiment, an adjustable memory cell is provided. The memory cell generally includes a gate electrode, at least one recording layer and a channel layer. The channel layer generally is capable of supporting a depletion region and is disposed between the gate electrode and the at least one recording layer. In this embodiment, upon activating the gate, the channel layer may be depleted and current initially flowing through the channel may be steered through the at least one recording layer.SELECTED DRAWING: None 【課題】 調整可能なセルビット形状を有する不揮発性メモリを提供する。【解決手段】 本発明の実施形態は、一般に、不揮発性メモリに関し、特に、調整可能なセルビット形状を有する不揮発性メモリに関する。一実施形態において、調整可能なメモリセルが提供される。メモリセルは、概して、ゲート電極、少なくとも１つの記録層、及びチャネル層を含む。チャネル層は、概して、空乏領域を支持することができ、ゲート電極と少なくとも１つの記録層との間に配設される。この実施形態において、ゲートを作動させると、チャネル層は欠乏されてもよく、チャネルを通って最初に流れる電流は、少なくとも１つの記録層を通って向けられてもよい。【選択図】なし
Bibliography:Application Number: JP20160129337