SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device.SOLUTION: A semiconductor device SA comprises: a semiconductor substrate; a pad electrode PA formed on the semiconductor substrate; a post electrode PE which is formed on the pad electrode PA and composed of a copper film; a sold...
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Main Authors | , , , |
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Format | Patent |
Language | English Japanese |
Published |
15.12.2016
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device.SOLUTION: A semiconductor device SA comprises: a semiconductor substrate; a pad electrode PA formed on the semiconductor substrate; a post electrode PE which is formed on the pad electrode PA and composed of a copper film; a solder ball electrode 16 which is formed on the post electrode PE and composed of a tin-containing ternary alloy; a terminal TA which is connected to the solder ball electrode 16 and formed on a surface of a wiring board WB; and an encapsulation material UF for filling up a gap between the semiconductor substrate and the wiring board WB. The post electrode PE has a columnar stem part ST and an overhang OH projecting outward from the stem part ST on an upper part of the stem part ST. The solder ball electrode 16 is connected to a top face of the post electrode PE across the step part ST and the overhang OH and a side wall of the step part ST of the post electrode PE contacts the encapsulation material UF across an entire circumference.SELECTED DRAWING: Figure 5
【課題】半導体装置の信頼性を向上する。【解決手段】半導体装置SAは、半導体基板と、半導体基板上に形成されたパッド電極PAと、パッド電極PA上に形成され、銅膜からなるポスト電極PEと、ポスト電極PE上に形成され、錫を含む3元合金からなる半田ボール電極16と、半田ボール電極16に接続され、配線基板WBの表面に形成された端子TAと、半導体基板と配線基板WBとの間を埋める封止材UFと、有する。そして、ポスト電極PEは、円柱状の幹部STと、幹部STの上部において、幹部STの外側に突出した張出部OHと、を有し、半田ボール電極16は、幹部STおよび張出部OHにわたって、ポスト電極PEの上面と接続しており、ポスト電極PEの幹部STの側壁は、全周にわたって、封止材UFに接触している。【選択図】図5 |
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Bibliography: | Application Number: JP20150092604 |