Abstract PROBLEM TO BE SOLVED: To suppress increase in a leakage quantity of a heat medium to be supplied into a space that is held between a focus ring and an electrostatic chuck.SOLUTION: The electrostatic suction method uses a substrate processing apparatus comprising: a supply part for supplying the heat medium to the space held between the electrostatic chuck on which a substrate is mounted and the focus ring that is provided on the electrostatic chuck while surrounding a region in which the substrate is mounted; and a plurality of electrodes which are provided in a region corresponding to the focus ring within the electrostatic chuck and to which voltages are applied for sucking the focus ring to the electrostatic chuck. During a plasma processing period that is a period in which plasma for performing plasma processing on the substrate is generated, the heat medium is supplied to the space by the supply part and during any other period than the plasma processing period, in a state where the heat medium is not supplied to the space, voltages different from each other are applied to the plurality of electrodes which sucks the focus ring.SELECTED DRAWING: Figure 3 【課題】フォーカスリングと静電チャックとで挟まれる空間に供給される熱媒体のリーク量の増大を抑えること。【解決手段】静電吸着方法は、基板が載置される静電チャックと、基板が載置される領域を囲んで静電チャック上に設けられたフォーカスリングとで挟まれる空間に熱媒体を供給する供給部と、静電チャック内部の、フォーカスリングに対応する領域に設けられ、静電チャックにフォーカスリングを吸着するための電圧が印加される複数の電極とを備えた基板処理装置を用いた静電吸着方法であって、基板をプラズマ処理するためのプラズマが生成される期間であるプラズマ処理期間において供給部によって空間に熱媒体を供給し、プラズマ処理期間以外の他の期間において、空間に熱媒体が供給されない状態で、フォーカスリングを吸着する複数の電極に互いに異なる電圧を印加する。【選択図】図3
AbstractList PROBLEM TO BE SOLVED: To suppress increase in a leakage quantity of a heat medium to be supplied into a space that is held between a focus ring and an electrostatic chuck.SOLUTION: The electrostatic suction method uses a substrate processing apparatus comprising: a supply part for supplying the heat medium to the space held between the electrostatic chuck on which a substrate is mounted and the focus ring that is provided on the electrostatic chuck while surrounding a region in which the substrate is mounted; and a plurality of electrodes which are provided in a region corresponding to the focus ring within the electrostatic chuck and to which voltages are applied for sucking the focus ring to the electrostatic chuck. During a plasma processing period that is a period in which plasma for performing plasma processing on the substrate is generated, the heat medium is supplied to the space by the supply part and during any other period than the plasma processing period, in a state where the heat medium is not supplied to the space, voltages different from each other are applied to the plurality of electrodes which sucks the focus ring.SELECTED DRAWING: Figure 3 【課題】フォーカスリングと静電チャックとで挟まれる空間に供給される熱媒体のリーク量の増大を抑えること。【解決手段】静電吸着方法は、基板が載置される静電チャックと、基板が載置される領域を囲んで静電チャック上に設けられたフォーカスリングとで挟まれる空間に熱媒体を供給する供給部と、静電チャック内部の、フォーカスリングに対応する領域に設けられ、静電チャックにフォーカスリングを吸着するための電圧が印加される複数の電極とを備えた基板処理装置を用いた静電吸着方法であって、基板をプラズマ処理するためのプラズマが生成される期間であるプラズマ処理期間において供給部によって空間に熱媒体を供給し、プラズマ処理期間以外の他の期間において、空間に熱媒体が供給されない状態で、フォーカスリングを吸着する複数の電極に互いに異なる電圧を印加する。【選択図】図3
Author KISHI HIROKI
SASAKI YASUHARU
SUH JISOO
TOMIOKA TAKETOSHI
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DocumentTitleAlternate 静電吸着方法及び基板処理装置
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Snippet PROBLEM TO BE SOLVED: To suppress increase in a leakage quantity of a heat medium to be supplied into a space that is held between a focus ring and an...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
PLASMA TECHNIQUE
PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS
PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Title ELECTROSTATIC SUCTION METHOD AND SUBSTRATE PROCESSING APPARATUS
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