SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

• Main Authors: IIJIMA RYOSUKE, NISHIO JOJI, SHIMIZU TATSUO, OHASHI TERUYUKI
• Format: Patent
• Language: English; Japanese
• Published: 25.04.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device with low contact resistance.SOLUTION: The semiconductor device includes: a SiC layer; an electrode electrically connected to the SiC layer; and an impurity area, provided between the SiC layer and the electrode, whose maximum concentration of impurities is greater than or equal to 1×10cmand less than or equal to 5×10cmcm. A distance between a position where the concentration of impurities is the maximum and a position on the SiC layer side from the position of the maximum concentration where the concentration of the impurities is reduced by one order of the maximum concentration is less than or equal to 50nm.SELECTED DRAWING: Figure 1 【課題】コンタクト抵抗の低い半導体装置半導体装置を提供する。【解決手段】実施形態の半導体装置は、ＳｉＣ層と、ＳｉＣ層と電気的に接続される電極と、ＳｉＣ層と電極との間に設けられ、不純物の最大濃度が１×１０２０ｃｍ−３以上５×１０２２ｃｍ−３以下で、不純物の最大濃度の位置と、最大濃度の位置からＳｉＣ層側の、不純物の濃度が最大濃度の一桁低下した位置との距離が５０ｎｍ以下である不純物領域と、を備える。【選択図】図１