SEMICONDUCTOR DEVICE MANUFACTURING METHOD

• Main Authors: OGAWA MASAAKI, NISHIWAKI WAKANA
• Format: Patent
• Language: English; Japanese
• Published: 25.04.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which improves product yield.SOLUTION: A semiconductor device manufacturing method of an embodiment comprises the steps of: forming a gate insulation film on a GaN-based semiconductor layer; forming a base film on the gate insulation film; forming in the base film, a first opening with a bottom on which the gate insulation film is exposed and which has an opening width W; forming a resist film on the base film; forming in the resist film, a second opening with a bottom on which the first opening is exposed, in which when assuming that an opening width of the bottom is Wand an opening width of an upper part is W, a relation represented as W≤W<Wis satisfied; forming a metal film in the first opening, in the second opening and on the resist film by an evaporation method; and separating the resist film and separating the base film to form a gate electrode.SELECTED DRAWING: Figure 2 【課題】製品歩留りが向上する半導体装置の製造方法を提供する。【解決手段】実施形態の半導体装置の製造方法は、ＧａＮ系半導体層上にゲート絶縁膜を形成し、ゲート絶縁膜上にベース膜を形成し、ベース膜に、ゲート絶縁膜が底部に露出し、底部の開口幅がＷ１の第１の開口部を形成し、ベース膜上にレジスト膜を形成し、レジスト膜に、第１の開口部が底部に露出し、底部の開口幅をＷ２、上部の開口幅をＷ３とする場合に、Ｗ１≦Ｗ３＜Ｗ２の関係を充足する第２の開口部を形成し、第１の開口部内、第２の開口部内、及びレジスト膜上に、蒸着法により金属膜を形成し、レジスト膜を剥離し、ベース膜を剥離してゲート電極を形成する。【選択図】図２