QUANTUM WELL TYPE INFRARED DETECTION ELEMENT AND MANUFACTURING METHOD OF THE SAME

• Main Author: OZAKI KAZUO
• Format: Patent
• Language: English; Japanese
• Published: 28.09.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a quantum well type infrared detection element capable of obtaining excellent sensitivity even when the element is downsized and made to be high definition and a manufacturing method of the same.SOLUTION: A quantum well type infrared detection element 40 includes: an active layer 23 formed by laminating a plurality of semiconductor layers whose bandgaps are mutually different; a first contact layer 22, disposed on an infrared light incident surface side, whose infrared light incident surface side and opposite side surface are in contact with one surface of the active layer 23; a second contact layer 24 being in contact with the other surface of the active layer 23; and an isolation groove 44 for dividing the first contact layer 22 and the active layer 23 for each pixel 41a. The isolation groove 44 has a trapezoidal cross section whose infrared light incident surface side is wide and opposite side is narrow. 【課題】小型化及び高精細化しても良好な感度が得られる量子井戸型赤外線検知素子及びその製造方法を提供する。【解決手段】量子井戸型赤外線検知素子４０は、バンドギャップが相互に異なる複数の半導体層を積層してなる活性層２３と 赤外線入射面側に配置され、赤外線入射面側と反対側の面が活性層２３の一方の面に接触する第１のコンタクト層２２と、活性層２３の他方の面に接触する第２のコンタクト層２４と、第１のコンタクト層２２及び活性層２３を画素４１ａ毎に分離する分離溝４４とを有する。分離溝４４は、赤外線入射面側が広く、その反対側が狭い台形状の断面を有する。【選択図】図３