MAGNETIC ELEMENT

• Main Authors: AOKI TAKUMI, SHIBATA TETSUYA, SUWA TAKAHIRO, NAKADA KATSUYUKI, ITO KUNIYASU
• Format: Patent
• Language: English; Japanese
• Published: 24.09.2015
• Subjects: BASIC ELECTRIC ELEMENTS; BASIC ELECTRONIC CIRCUITRY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERATION OF NOISE BY SUCH CIRCUITS; GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING,BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN ANON-SWITCHING MANNER; INDUCTANCES; MAGNETS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES; SEMICONDUCTOR DEVICES; TRANSFORMERS

PROBLEM TO BE SOLVED: To provide a magnetic element containing magnetoresistance effect film in which magnetic field having sufficient intensity is applied to the magnetoresistance effect film.SOLUTION: A magnetic element 10 has a magnetoresistance effect film 3 having a non-magnetic spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer which are disposed through the non-magnetic spacer layer, a pair of electrodes disposed through the magnetoresistance effect film 3 in the lamination direction of the magnetoresistance effect film 3, at least two first soft magnetic layers 4, a coil 7 and a second soft magnetic layer 6 which is magnetically connected to the coil 7. The second soft magnetic layer 6 is annular, the interval distance between the second soft magnetic layer 6 and the magnetoresistance effect film 3 is larger than the interval distance between the first soft magnetic layer 4 and the magnetoresistance effect film 3, and the film thickness of the second soft magnetic layer 6 is larger than the film thickness of the first soft magnetic layer 4. A part of each of at least two first soft magnetic layers 4 and a part of the second soft magnetic layer 6 are laminated in the lamination direction of the magnetoresistance effect film 3, the first soft magnetic layer 4 and the second soft magnetic layer 6 are magnetically coupled to each other, and the magnetoresistance effect film 3 is disposed between the respective tip portions of at least two first soft magnetic layers 4. 【課題】磁気抵抗効果膜を含む磁性素子において、磁気抵抗効果膜に充分な強度の磁界が印加されない。【解決手段】磁性素子１０は、非磁性スペーサー層と非磁性スペーサー層を介して配設された第１強磁性層および第２強磁性層とを備えた磁気抵抗効果膜３と、磁気抵抗効果膜３の積層方向に磁気抵抗効果膜３を介して配設された一対の電極と、少なくとも２つの第１軟磁性層４と、コイル７と、コイル７と磁気的に接続された第２軟磁性層６とを備え、第２軟磁性層６は環状で、第２軟磁性層６と磁気抵抗効果膜３との離間距離は第１軟磁性層４と磁気抵抗効果膜３との離間距離より大きく、第２軟磁性層６の膜厚は第１軟磁性層４の膜厚より厚く、少なくとも２つの第１軟磁性層４の各々の一部と第２軟磁性層６の一部は磁気抵抗効果膜３の積層方向に重なっていて、第１軟磁性層４と第２軟磁性層６は磁気的に結合していて、少なくとも２つの第１軟磁性層４の各々の先端部の間に磁気抵抗効果膜３が配設されていることを特徴とする。【選択図】 図１