SUBSTRATE FOR SEMICONDUCTOR AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a substrate for a semiconductor and a manufacturing method of the same, which can form a voidless conductor in a through bole of a base material even when a pitch between the through holes becomes narrower.SOLUTION: A substrate 10 for a semiconductor comprises: a bas...

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Bibliographic Details
Main Author KOGA OSAMU
Format Patent
LanguageEnglish
Japanese
Published 20.08.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a substrate for a semiconductor and a manufacturing method of the same, which can form a voidless conductor in a through bole of a base material even when a pitch between the through holes becomes narrower.SOLUTION: A substrate 10 for a semiconductor comprises: a base material 1 having a through hole 1a; a metal wire 2 which pierces the through hole 1a; and a solder 3 filled in the through hole 1a where the metal wire 2 is arranged. 【課題】貫通孔同士のピッチが狭くなっても、基材の貫通孔にボイドレスな導電体を形成することのできる半導体用基板及びその製造方法を提供する。【解決手段】半導体用基板１０は、貫通孔１ａを有する基材１と、貫通孔１ａを貫通する金属ワイヤ２と、その金属ワイヤ２が配置された貫通孔１ａに充填されたはんだ３と、を備える。【選択図】図５
Bibliography:Application Number: JP20140020569