SEMICONDUCTOR DEVICE

• Main Authors: YAMANAKA MIKIHIRO, SAEGUSA MICHINOBU
• Format: Patent
• Language: English; Japanese
• Published: 16.07.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MEASUREMENT OF NUCLEAR OR X-RADIATION; MEASURING; PHYSICS; PICTORIAL COMMUNICATION, e.g. TELEVISION; SEMICONDUCTOR DEVICES; TESTING

PROBLEM TO BE SOLVED: To improve the operational stability of a semiconductor device having an active matrix substrate and a counter substrate.SOLUTION: The semiconductor device comprises a first substrate 12, a second substrate 32 or a photoelectric conversion substrate 51, a plurality of thin-film transistors 14, a plurality of semiconductor layers 14i, and a plurality of pixel electrodes 16 supported by the first substrate, an electrode layer 34 supported by the second substrate and a photoelectric conversion layer 36 formed on the electrode layer or an electrode layer 54 formed on a surface, opposite the first substrate side, of the photoelectric conversion substrate, and at least one X-ray absorption connection layer 40 provided between the plurality of semiconductor layers and the photoelectric conversion layer or the photoelectric conversion substrate. The X-ray absorption connection layer contains an element whose linear attenuation coefficient at 20 keV is 200 cmor more, and has a plurality of X-ray absorption connection areas 40a each of which, when seen from the normal direction of the first substrate, overlaps at least part of one of the plurality of pixel electrodes or the whole of one of the plurality of semiconductor layers. 【課題】アクティブマトリクス基板と対向基板とを有する半導体装置の動作安定性を向上させる。【解決手段】半導体装置は、第１基板１２と、第２基板３２または光電変換基板５１と、第１基板に支持された複数の薄膜トランジスタ１４、複数の半導体層１４ｉ、および複数の画素電極１６と、第２基板に支持された電極層３４および電極層上に形成された光電変換層３６、または、光電変換基板の第１基板側とは反対側の表面上に形成された電極層５４と、複数の半導体層と光電変換層または光電変換基板との間に設けられた、少なくとも１つのＸ線吸収接続層４０とを有し、Ｘ線吸収接続層は、２０ｋｅＶにおける線減衰係数が２００ｃｍ-1以上である元素を含有し、それぞれが、第１基板の法線方向から見たとき、複数の画素電極のいずれか１つの少なくとも一部および複数の半導体層のいずれか１つの全部と重なる複数のＸ線吸収接続領域４０ａを有する。【選択図】図１