SEMICONDUCTOR DEVICE MANUFACTURING METHOD

• Main Authors: IIJIMA RYOSUKE, NISHIO JOJI, SHIMIZU TATSUO, OTA CHIHARU, SHINOHE TAKASHI
• Format: Patent
• Language: English; Japanese
• Published: 30.03.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can inhibit deterioration in device characteristics.SOLUTION: A semiconductor device manufacturing method of an embodiment comprises the steps of: preparing a substrate; and growing a p-type SiC single crystal layer on a surface of the substrate from a liquid phase which contains Si (silicon), C (carbon), a p-type impurity and an n-type impurity, and when assuming that the p-type impurity is an element A and the n-type impurity is an element D, a combination of the element A and the element D is at least one first combination selected from combinations of Al (aluminum) and N (nitrogen), Ga (gallium) and N (nitrogen) and In (indium) and N (nitrogen) and a second combination of B (boron) and P (phosphorous), in which a ratio of a concentration of the element D to a concentration of the element A is larger than 0.33 and smaller than 1.0, which compose the first combination or the second combination. 【課題】デバイス特性の劣化を抑制することができる半導体装置の製造方法を提供する。【解決手段】実施形態の半導体装置の製造方法は、基板を準備し、Ｓｉ（シリコン）、Ｃ（炭素）、ｐ型不純物、および、ｎ型不純物を含有し、ｐ型不純物を元素Ａ、ｎ型不純物を元素Ｄとする場合に、元素Ａと元素Ｄとの組み合わせが、Ａｌ（アルミニウム）とＮ（窒素）、Ｇａ（ガリウム）とＮ（窒素）、および、Ｉｎ（インジウム）とＮ（窒素）から選ばれる少なくとも一つである第１の組み合わせ、Ｂ（ボロン）とＰ（リン）の第２の組み合わせの少なくとも一方の組み合わせであり、第１または第２の組み合わせを構成する元素Ｄの濃度の元素Ａの濃度に対する比が０．３３より大きく１．０より小さい液相から、基板の表面にｐ型のＳｉＣ単結晶層を成長させる。【選択図】図２