MICROWAVE ION SOURCE AND ION EXTRACTION PART

PROBLEM TO BE SOLVED: To enhance plasma density in the plasma chamber of a microwave ion source.SOLUTION: A microwave ion source 10 includes a plasma chamber 12 including a microwave introduction part 16 and an ion extraction part 18, and a magnetic field generator 40 for generating a magnetic field...

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Bibliographic Details
Main Authors TAKAHASHI NOBUAKI, MURATA HIROHIKO
Format Patent
LanguageEnglish
Japanese
Published 29.01.2015
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Summary:PROBLEM TO BE SOLVED: To enhance plasma density in the plasma chamber of a microwave ion source.SOLUTION: A microwave ion source 10 includes a plasma chamber 12 including a microwave introduction part 16 and an ion extraction part 18, and a magnetic field generator 40 for generating a magnetic field M in the plasma chamber 12 toward the direction of travel P of microwaves. The ion extraction part 18 includes an ion beam extraction surface 34 crossing the magnetic field M, a coating part 52 forming at least a part of the ion beam extraction surface 34, and a magnetic material 50 provided on the back of the coating part 52. The coating part 52 is formed of a secondary electron discharge material. 【課題】マイクロ波イオン源のプラズマ室におけるプラズマ密度を向上する。【解決手段】マイクロ波イオン源10は、マイクロ波導入部16とイオン引出部18とを備えるプラズマ室12と、マイクロ波の進行方向Pに向けられた磁場Mをプラズマ室12に発生させる磁場発生器40と、を備える。イオン引出部18は、磁場Mに交差するイオンビーム引出面34と、イオンビーム引出面34の少なくとも一部を形成する被覆部52と、被覆部52の背後に設けられている磁性体50と、を備える。被覆部52は、二次電子放出材料で形成されている。【選択図】図1
Bibliography:Application Number: JP20130142972