CRUCIBLE FOR GROWING SAPPHIRE SINGLE CRYSTAL
PROBLEM TO BE SOLVED: To provide a low-cost crucible for growing a sapphire single crystal, which is a crucible used for growing the sapphire single crystal using a Bridgman method or a VGF method and allows taking-out of the sapphire single crystal from the crucible after growth without breaking th...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English |
Published |
29.09.2014
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | PROBLEM TO BE SOLVED: To provide a low-cost crucible for growing a sapphire single crystal, which is a crucible used for growing the sapphire single crystal using a Bridgman method or a VGF method and allows taking-out of the sapphire single crystal from the crucible after growth without breaking the crucible.SOLUTION: Among inner peripheral surfaces of a crucible 1 made of tungsten or a tungsten alloy, an adhesion preventive layer 7 is formed at least on a part which contacts an upper surface of a sapphire raw material solution 5 during growing of a sapphire single crystal. The adhesion preventive layer consists of an alloy including the tungsten or a component consisting of the tungsten alloy and 5 mass% or more of a metal M (M is one or more elements selected form Pt, Pd, Re, Rh, or Ir). The surface of the adhesion preventive layer has a tungsten content of 20 mass% or more, a metal M content of 20 mass% or more, and the thickness is in the range of 0.05-50 μm. |
---|---|
AbstractList | PROBLEM TO BE SOLVED: To provide a low-cost crucible for growing a sapphire single crystal, which is a crucible used for growing the sapphire single crystal using a Bridgman method or a VGF method and allows taking-out of the sapphire single crystal from the crucible after growth without breaking the crucible.SOLUTION: Among inner peripheral surfaces of a crucible 1 made of tungsten or a tungsten alloy, an adhesion preventive layer 7 is formed at least on a part which contacts an upper surface of a sapphire raw material solution 5 during growing of a sapphire single crystal. The adhesion preventive layer consists of an alloy including the tungsten or a component consisting of the tungsten alloy and 5 mass% or more of a metal M (M is one or more elements selected form Pt, Pd, Re, Rh, or Ir). The surface of the adhesion preventive layer has a tungsten content of 20 mass% or more, a metal M content of 20 mass% or more, and the thickness is in the range of 0.05-50 μm. |
Author | OKANO KATSUHIKO SHIMIZU JUICHI SHO YOSHIHIKO |
Author_xml | – fullname: OKANO KATSUHIKO – fullname: SHIMIZU JUICHI – fullname: SHO YOSHIHIKO |
BookMark | eNrjYmDJy89L5WTQcQ4KdfZ08nFVcPMPUnAP8g_39HNXCHYMCPDwDHJVCAbygHLOQZHBIY4-PAysaYk5xam8UJqbQcnNNcTZQze1ID8-tbggMTk1L7Uk3ivAyMDQxNDC0NDEyNGYKEUA2pUnYg |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
ExternalDocumentID | JP2014181142A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_JP2014181142A3 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 12:29:54 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_JP2014181142A3 |
Notes | Application Number: JP20130055608 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140929&DB=EPODOC&CC=JP&NR=2014181142A |
ParticipantIDs | epo_espacenet_JP2014181142A |
PublicationCentury | 2000 |
PublicationDate | 20140929 |
PublicationDateYYYYMMDD | 2014-09-29 |
PublicationDate_xml | – month: 09 year: 2014 text: 20140929 day: 29 |
PublicationDecade | 2010 |
PublicationYear | 2014 |
RelatedCompanies | SUMITOMO METAL MINING CO LTD |
RelatedCompanies_xml | – name: SUMITOMO METAL MINING CO LTD |
Score | 2.958835 |
Snippet | PROBLEM TO BE SOLVED: To provide a low-cost crucible for growing a sapphire single crystal, which is a crucible used for growing the sapphire single crystal... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
Title | CRUCIBLE FOR GROWING SAPPHIRE SINGLE CRYSTAL |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140929&DB=EPODOC&locale=&CC=JP&NR=2014181142A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMUm0NDFKMU7WNUtMM9E1STIw1000MU_WTU5MNDBNNDa2TDEAbRT29TPzCDXxijCNYGLIhu2FAZ8TWg4-HBGYo5KB-b0EXF4XIAaxXMBrK4v1kzKBQvn2biG2LmrQ3jHo9CZgB9rFydY1wN_F31nN2dnWK0DNLwgsB6zMDE2MHJkZWEHtaNBB-65hTqBtKQXIdYqbIANbANC4vBIhBqbUPGEGTmfY1WvCDBy-0BlvIBOa-YpFGHScg0KdPZ18XBWAPTcF9yD_cE8_d4Vgx4AAD88gV4VgIA8o5xwUGRzi6CPKoOTmGuLsoQu0Nh7uyXivACQnGosxsAB7_6kSDApGFqapyUagybK0FJNEc9C8ZVpSkgXo0B3DRFPTREkGaTwGSeGVlWbgAvFAyx-MLGUYWEqKSlNlgXVsSZIcOGwA-zl6xw |
link.rule.ids | 230,309,786,891,25594,76903 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LT8JAEJ4gGvGmqFHx0RjDyUZotxQOxNBtoa2lNKUInprtg8SYIJEa_76zG1BO3Hb3S2Yfyezk23kswANhHaJkaiq32JzIJGnoMiN6KqeMNTSmqp2swROFh37LnhB3ps1K8LHJhRF1Qn9EcUTUqBT1vRD39fL_EcsUsZWrp-Qdhz6f-1HXrK_ZMa_ehATaNLpWMDJHtE5p1w3qfigwNGZNovT2YF9HTii40qvB01KW2zalfwwHAYpbFCdQyhdVqNDN12tVOByuPd7YXCvf6hQeaTihjuFZEjI3aRCOpo4_kMa9ILCd0JLG2EOMhm_jqOedwX3fiqgt47Tx3yZjN9haonoOZWT_-QVISlvLU4U7y-YZYTr3W86TpM2L7jSZprFLqO0QdLUTvYOKHQ292HP8lxoccYSHQiidaygXX9_5DdrbIrkV5_QL3T99sQ |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=CRUCIBLE+FOR+GROWING+SAPPHIRE+SINGLE+CRYSTAL&rft.inventor=OKANO+KATSUHIKO&rft.inventor=SHIMIZU+JUICHI&rft.inventor=SHO+YOSHIHIKO&rft.date=2014-09-29&rft.externalDBID=A&rft.externalDocID=JP2014181142A |