MANUFACTURING METHOD OF TRENCH GATE POWER SEMICONDUCTOR DEVICE

• Main Authors: NOZOE TOSHIO, MORITA TADAYUKI, MURAMATSU TOSHIAKI
• Format: Patent
• Language: English
• Published: 05.06.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To solve such a problem that in the cleaning of a power semiconductor device, such as a power MOSFET, before formation of a gate insulating film, batch cleaning including a steam drying process is used frequently because of large processing capacity, but it is revealed by the study of the inventors that a water mark is generated during the steam drying process, in a trench gate power semiconductor device, such as a trench gate power MOSFET.SOLUTION: In the cleaning of a trench gate power semiconductor device before formation of a gate insulating film, single wafer cleaning is performed in a state where the trench inner surface is hydrophilic, after batch cleaning including a steam drying process.