LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS
PROBLEM TO BE SOLVED: To provide a method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures.SOLUTION: Silicon containing precursors used for the deposition are monoc...
Saved in:
Main Authors | , , , , , , , , |
---|---|
Format | Patent |
Language | English |
Published |
22.05.2014
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!