APPARATUS AND METHOD FOR INSPECTING WAFER CONNECTION STRENGTH

• Main Authors: SADA TARO, TAUCHI KAZUHIRO, KOMATSU KENICHI, KOGURE MAKOTO
• Format: Patent
• Language: English
• Published: 07.01.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide an inspection apparatus that can inspect connection strength of a local connection part without breaking a connecting wafer even in the absence of a clearance in a connection interface.SOLUTION: A wafer connection strength inspection apparatus 100 includes: a sample stage 160 to hold a connecting wafer 200; a terahertz wave generator 151 to generate a terahertz wave; a terahertz wave detector 157 to detect a terahertz wave that transmits through or is reflected from the connecting wafer 200; and an operation part to calculate THz wave characteristics of the connecting wafer 200 from the terahertz wave detected by the terahertz wave detector 157. The operation part calculates connection strength corresponding to the THz wave characteristics of the connecting wafer as an inspection target from a relationship between previously found THz wave characteristics and connection strength of a reference sample.