FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS
PROBLEM TO BE SOLVED: To provide a film deposition apparatus which continuously and stably performs a plurality of film deposition batches.SOLUTION: A load lock chamber 11B is connected to a film deposition chamber wherein a film deposition process region and a reaction process region are arranged,...
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Format | Patent |
Language | English |
Published |
29.11.2012
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Abstract | PROBLEM TO BE SOLVED: To provide a film deposition apparatus which continuously and stably performs a plurality of film deposition batches.SOLUTION: A load lock chamber 11B is connected to a film deposition chamber wherein a film deposition process region and a reaction process region are arranged, via an openable and closable isolating means 11b. In the load lock chamber 11B, a heating device 90 capable of heating the inside from the inner wall surface is provided, and a vacuum pump 15' capable of evacuating the inside of the load lock chamber 11B is connected to the chamber 11B. In the load lock chamber 11B, a gas condensing and collecting device 70 capable of condensing and collecting moisture as an impurity component floating in the load lock chamber 11B is provided. The gas condensing and collecting device 70 is arranged close to the inner wall surface of the load lock chamber 11B and includes piping 72 which allows the introduction of a low temperature fluid from the outside of the chamber 11B and the circulation of the low temperature fluid in the chamber 11B. Thereby, the impurity component floating in the load lock chamber 11B is condensed and collected on the outside surface of the piping 72 of which the temperature is lowered by introduction of the low temperature fluid into the piping 72 and circulation of the low temperature fluid. |
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AbstractList | PROBLEM TO BE SOLVED: To provide a film deposition apparatus which continuously and stably performs a plurality of film deposition batches.SOLUTION: A load lock chamber 11B is connected to a film deposition chamber wherein a film deposition process region and a reaction process region are arranged, via an openable and closable isolating means 11b. In the load lock chamber 11B, a heating device 90 capable of heating the inside from the inner wall surface is provided, and a vacuum pump 15' capable of evacuating the inside of the load lock chamber 11B is connected to the chamber 11B. In the load lock chamber 11B, a gas condensing and collecting device 70 capable of condensing and collecting moisture as an impurity component floating in the load lock chamber 11B is provided. The gas condensing and collecting device 70 is arranged close to the inner wall surface of the load lock chamber 11B and includes piping 72 which allows the introduction of a low temperature fluid from the outside of the chamber 11B and the circulation of the low temperature fluid in the chamber 11B. Thereby, the impurity component floating in the load lock chamber 11B is condensed and collected on the outside surface of the piping 72 of which the temperature is lowered by introduction of the low temperature fluid into the piping 72 and circulation of the low temperature fluid. |
Author | KYO YUSHO SHIONO ICHIRO |
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Snippet | PROBLEM TO BE SOLVED: To provide a film deposition apparatus which continuously and stably performs a plurality of film deposition batches.SOLUTION: A load... |
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SubjectTerms | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
Title | FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS |
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