ION INJECTION SIMULATION METHOD, ION INJECTION SIMULATION DEVICE, METHOD OF PRODUCING SEMICONDUCTOR DEVICE, AND METHOD OF DESIGNING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a simple method of simulating the well proximity effect.SOLUTION: An ion injection simulation method includes: calculating a reinjection dose injected into a structure formed on a substrate and reinjected from a side face of the structure to the substrate; and calcul...

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Bibliographic Details
Main Author KOMACHI JUN
Format Patent
LanguageEnglish
Published 25.10.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a simple method of simulating the well proximity effect.SOLUTION: An ion injection simulation method includes: calculating a reinjection dose injected into a structure formed on a substrate and reinjected from a side face of the structure to the substrate; and calculating concentration distribution of impurities injected into the substrate from a distribution function and reinjection conditions of the reinjection dose.
Bibliography:Application Number: JP20110286252