METHODS FOR FABRICATING TRANSISTORS INCLUDING ONE OR MORE CIRCULAR TRENCHES

• Main Authors: LIPCSEI LASZLO, LU HAMILTON
• Format: Patent
• Language: English
• Published: 04.10.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a transistor and a method of fabricating the transistor, which includes one or more circular trenches.SOLUTION: Provided are a transistor and a method of fabricating the transistor, including a metal oxide deposited on an epitaxial layer, and a photo resist deposited and patterned over the metal oxide. The metal oxide and the epitaxial layer are etched to form at least one circular trench. The trench surfaces are defined by the epitaxial layer. An oxide layer is grown on the trench surfaces of each trench, and a gate conductor is formed within at least one trench.