SEMICONDUCTOR MEMORY DEVICE AND CELL LEAKAGE DETECTION METHOD THEREFOR

• Main Author: OBATA HIROYUKI
• Format: Patent
• Language: English
• Published: 30.08.2012
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

PROBLEM TO BE SOLVED: To solve the problem that product reliability of an SRAM circuit decreases.SOLUTION: A semiconductor memory device with a cell leakage determination function comprises: a complementary bit line pair; a memory cell that is connected to the bit line pair and stores a value corresponding to a value applied to the bit line pair at the time of cell selection, in a cell node; and a test control circuit that, during a period of cell leakage testing, stops supplying power for driving the memory cell in a non-selection state to the memory cell in a selection state after applying a first value to one of the bit line pair, and determines cell leakage in the semiconductor memory device in accordance with a first cell node value of the memory cell on a side corresponding to one of the bit line pair by applying a second value opposite to the first value to one of the bit line pair.