DETERMINING METHOD FOR DETERMINING AT LEAST ONE OF EXPOSURE CONDITION AND MASK PATTERN, AND PROGRAM THEREFOR

PROBLEM TO BE SOLVED: To determine an exposure condition or a mask pattern with which a desired image can be obtained when exposure is actually performed even if a lateral shift of an image due to exposure equipment occurs. SOLUTION: A determining method is to determine at least one of the exposure...

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Main Authors ISHII HIROYUKI, GYODA YUICHI, MIKAMI KOJI, TSUJITA KOICHIRO
Format Patent
LanguageEnglish
Published 08.09.2011
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Abstract PROBLEM TO BE SOLVED: To determine an exposure condition or a mask pattern with which a desired image can be obtained when exposure is actually performed even if a lateral shift of an image due to exposure equipment occurs. SOLUTION: A determining method is to determine at least one of the exposure condition and the mask pattern of the exposure equipment by using a computer. The exposure equipment includes an illumination optical system illuminating a mask by using light from a light source and a projection optical system projecting the mask pattern on a substrate. The method calculates the image of the pattern on a substance surface of the projection optical system by using information on the lateral shift of the image due to the exposure equipment and to determine at least one of the exposure condition and the mask pattern based on a calculated result. COPYRIGHT: (C)2011,JPO&INPIT
AbstractList PROBLEM TO BE SOLVED: To determine an exposure condition or a mask pattern with which a desired image can be obtained when exposure is actually performed even if a lateral shift of an image due to exposure equipment occurs. SOLUTION: A determining method is to determine at least one of the exposure condition and the mask pattern of the exposure equipment by using a computer. The exposure equipment includes an illumination optical system illuminating a mask by using light from a light source and a projection optical system projecting the mask pattern on a substrate. The method calculates the image of the pattern on a substance surface of the projection optical system by using information on the lateral shift of the image due to the exposure equipment and to determine at least one of the exposure condition and the mask pattern based on a calculated result. COPYRIGHT: (C)2011,JPO&INPIT
Author ISHII HIROYUKI
TSUJITA KOICHIRO
GYODA YUICHI
MIKAMI KOJI
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Snippet PROBLEM TO BE SOLVED: To determine an exposure condition or a mask pattern with which a desired image can be obtained when exposure is actually performed even...
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SubjectTerms APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
Title DETERMINING METHOD FOR DETERMINING AT LEAST ONE OF EXPOSURE CONDITION AND MASK PATTERN, AND PROGRAM THEREFOR
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