METHOD FOR REMOVING PHOTORESIST AND ETCHING RESIDUE

• Main Authors: NISHIMURA EIICHI, BALASUBRAMANIAM VAIDYANATHAN, HAGIWARA MASAAKI, INAZAWA KOUICHIRO
• Format: Patent
• Language: English
• Published: 31.03.2011
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MAKING ARTICLES OF PAPER, CARDBOARD OR MATERIAL WORKED IN A MANNERANALOGOUS TO PAPER; MAKING ARTICLES OF PAPER, CARDBOARD OR MATERIAL WORKED IN AMANNER ANALOGOUS TO PAPER, NOT PROVIDED FOR IN SUBCLASSESB31B OR B31C; MATERIALS THEREFOR; ORIGINALS THEREFOR; PERFORMING OPERATIONS; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; TRANSPORTING; WORKING PAPER, CARDBOARD OR MATERIAL WORKED IN A MANNER ANALOGOUSTO PAPER

PROBLEM TO BE SOLVED: To provide a plasma processing method for removing photoresist and etching residue, where erosion of the surrounding substrate layer is reduced as compared with that in one-step ashing. SOLUTION: An ashing method uses a two-step plasma process involving a hydrogen-containing gas, where a low bias or zero bias is applied to a substrate in a first cleaning step to remove a significant amount of photoresist remnant and etching residue from the substrate, and removing a detrimental fluorocarbon residue is removed from a chamber surface by etching. An increased bias is applied to the substrate in a second cleaning step to remove the photoresist remnant and etching residue from the substrate. The two-step process reduces the memory effect commonly observed in each conventional one-step ashing process. A method of endpoint detection can be used to monitor the ashing process. COPYRIGHT: (C)2011,JPO&INPIT