METHOD OF MANUFACTURING SILICON SEMICONDUCTOR WAFER HAVING LOW DEFECT DENSITY

• Main Authors: KROTTENTHALER PETER, WAHLICH REINHOLD, LAMBERT ULRICH, VON AMMON WILFRIED, GRAEF DIETER
• Format: Patent
• Language: English
• Published: 03.03.2011
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide an optimized method of manufacturing a silicon wafer capable of obtaining a silicon wafer having a low defect density especially in a region near the surface and an oxygen doping concentration of at least 4×1017/cm3. SOLUTION: This is a method of manufacturing a silicon wafer having a low defect density in which (a) a silicon single crystal having an oxygen doping concentration of at least 4×1017/cm3is manufactured by solidifying and cooling a melting substance where the hold time of the single crystal during cooling in the temperature range of 850-1,100°C is less than 80 minutes, (b) the single crystal is processed to form the silicon wafer and (c) the silicon wafer is annealed at least at a temperature of 1,000°C for at least an hour. COPYRIGHT: (C)2011,JPO&INPIT