METHOD AND APPARATUS FOR DEFECT INSPECTION OF WAFER

• Main Author: NINOMIYA MASAHARU
• Format: Patent
• Language: English
• Published: 17.02.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; SEMICONDUCTOR DEVICES; TESTING

PROBLEM TO BE SOLVED: To simplify an inspection of an internal defect of a wafer and also a defect on front or back surface of a wafer. SOLUTION: A defect inspection method has: a first imaging process in which two pairs of light source/imaging units 4, 5 comprising light sources, imagers and optical systems, are disposed so as to face each other through the wafer 1, the wafer 1 is irradiated with an infrared light from at least one of the light source/imaging units 4, 5, a transmission light from the wafer 1 is received, and a transmission image of the wafer 1 is captured; a second imaging process in which the wafer 1 is irradiated with the infrared light or a visible light from the light source/imaging units 4, 5, a reflection light from the wafer 1 is received, and reflection images of both surfaces of the wafer are captured; and an extraction process in which the defects in the wafer 1 are extracted based on the transmission image and the reflection images of both surfaces, and simultaneously detects the an internal defect and a defect on the front or back surface of the wafer. COPYRIGHT: (C)2011,JPO&INPIT