COMPOUND SEMICONDUCTOR SUBSTRATE

• Main Authors: KOMIYAMA JUN, ERIGUCHI KENICHI, OISHI KOJI, ABE YOSHIHISA, YOSHIDA AKIRA, SUZUKI SHUNICHI
• Format: Patent
• Language: English
• Published: 14.10.2010
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a compound semiconductor substrate that controls cracks, crystallization defects, and warpage on a nitride semiconductor layer, and improves productivity. SOLUTION: The compound semiconductor substrate 1 has: a silicon single crystal substrate 10 with a crystal orientation as a surface (111); first buffer layers 20a and 20b formed on the silicon single crystal substrate 10 and made up of an AlxGa1-xN single crystal (0<x≤1); a second buffer layer 30 formed on the first buffer layers 20a and 20b wherein a first single layer 30a made up of an AlyGa1-yN single crystal (0≤y<0.1) with a thickness of ≥250 nm and ≤350 nm, and a second single layer 30b made up of an AlzGa1-zN single crystal (0.9<z≤1) with a thickness of ≥5 nm and ≤20 nm, are alternately laminated in plural numbers; and a semiconductor element formation region 40 formed on the second buffer layer 30, which contains at least one nitride semiconductor single crystal layers. COPYRIGHT: (C)2011,JPO&INPIT