METHOD FOR MANUFACTURING SOI SUBSTRATE

• Main Authors: FURUYAMA MASAKI, SHIMOMURA AKIHISA, HIGA EIJI
• Format: Patent
• Language: English
• Published: 13.05.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To increase adhesion between a single crystal semiconductor layer and a base substrate and to reduce bonding defects therebetween. SOLUTION: Radical treatment is performed on a surface of a semiconductor substrate to form a first insulating film on the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the first insulating film to form an embrittlement region in the semiconductor substrate; and a second insulating film is formed on the first insulating film. Heat treatment is performed after a surface of the second insulating film and a surface of the base substrate are bonded together to perform separation along the embrittlement region so that a semiconductor layer is formed over the base substrate with the first and the second insulating films interposed therebetween. The semiconductor layer is etched, and the semiconductor layer on which the etching is performed is irradiated with a laser beam. COPYRIGHT: (C)2010,JPO&INPIT