SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

• Main Authors: AONO SHINJI, MORIYA JUNICHI
• Format: Patent
• Language: English
• Published: 25.02.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device and its production process being a gate electrode type and capable of suppressing ion resistance by a simple structure. SOLUTION: P-type regions 2, 4 are provided on a first n-type region 1. A second n-type region 3 is provided on the p-type regions 2, 4 spaced apart from the first n-type region 1 by the p-type regions 2, 4. A gate electrode 8 serves to form an n-channel between the first and second n-type regions 1, 3. A first electrode 6 is electrically connected to each of the p-type region 4 and the second n-type region 3. A second electrode 11 is provided on the first n-type region 1 such that it is spaced apart from the p-type region 2 by the first n-type region 1 and at least a part thereof is in contact with the first n-type region 1. The second electrode 11 is made of any of metal and alloy, and serves to inject holes into the first n-type region 1. COPYRIGHT: (C)2010,JPO&INPIT