COMPOSITION FOR RESIST LOWER-LAYER FILM FORMATION, AND METHOD OF FORMING DUAL-DAMASCENE STRUCTURE USING THE SAME

PROBLEM TO BE SOLVED: To provide a composition for resist lower-layer film formation that forms a resist lower-layer film which is suitably buried in a via or trench, easily formed based upon a desired pattern, and superior in etching resistance, and a method of forming a dual-damascene structure us...

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Main Authors SATO MITSUHISA, MINEGISHI SHINYA, KONNO YOSUKE, NOMURA NAKAATSU
Format Patent
LanguageEnglish
Published 29.10.2009
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Abstract PROBLEM TO BE SOLVED: To provide a composition for resist lower-layer film formation that forms a resist lower-layer film which is suitably buried in a via or trench, easily formed based upon a desired pattern, and superior in etching resistance, and a method of forming a dual-damascene structure using the same. SOLUTION: The composition for resist lower-layer film formation contains (A) a polymer having an aryl group, (B) a surfactant having an acethylene group, and (C) a solvent. Further, the composition for resist lower-layer film formation may contain (D) an acid forming agent and (E) a crosslinking agent. COPYRIGHT: (C)2010,JPO&INPIT
AbstractList PROBLEM TO BE SOLVED: To provide a composition for resist lower-layer film formation that forms a resist lower-layer film which is suitably buried in a via or trench, easily formed based upon a desired pattern, and superior in etching resistance, and a method of forming a dual-damascene structure using the same. SOLUTION: The composition for resist lower-layer film formation contains (A) a polymer having an aryl group, (B) a surfactant having an acethylene group, and (C) a solvent. Further, the composition for resist lower-layer film formation may contain (D) an acid forming agent and (E) a crosslinking agent. COPYRIGHT: (C)2010,JPO&INPIT
Author NOMURA NAKAATSU
SATO MITSUHISA
MINEGISHI SHINYA
KONNO YOSUKE
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Snippet PROBLEM TO BE SOLVED: To provide a composition for resist lower-layer film formation that forms a resist lower-layer film which is suitably buried in a via or...
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SourceType Open Access Repository
SubjectTerms APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
Title COMPOSITION FOR RESIST LOWER-LAYER FILM FORMATION, AND METHOD OF FORMING DUAL-DAMASCENE STRUCTURE USING THE SAME
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