FERROELECTRIC MEMORY DEVICE, AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a ferroelectric memory device which is small in aspect ratio of a contact hole without causing an increase in number of man-hour nor characteristic deterioration of the ferroelectric memory device. SOLUTION: The ferroelectric memory device includes a first interlayer...

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Bibliographic Details
Main Author TATSUNARI TOSHITAKA
Format Patent
LanguageEnglish
Published 23.07.2009
Subjects
ELECTRICITY
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