FERROELECTRIC MEMORY DEVICE, AND MANUFACTURING METHOD THEREOF

• Main Author: TATSUNARI TOSHITAKA
• Format: Patent
• Language: English
• Published: 23.07.2009
• Subjects: ELECTRICITY

PROBLEM TO BE SOLVED: To provide a ferroelectric memory device which is small in aspect ratio of a contact hole without causing an increase in number of man-hour nor characteristic deterioration of the ferroelectric memory device. SOLUTION: The ferroelectric memory device includes a first interlayer insulating film 13 formed on a substrate 11, a mesa portion 24 including a ferroelectric capacitor body 22 formed selectively on the first interlayer insulating film 13 and a second interlayer insulating film 21, a side wall 25 formed on a side wall of the mesa portion 24, an insulating upper hydrogen barrier film 26 coming into contact with an upper surface of an upper electrode 20 and the side wall 25 to cover them, a third interlayer insulating film 27 formed on the first interlayer insulating film 13 to cover an upper hydrogen barrier film 26, and a wiring contact plug 29 formed at an interval with the mesa portion 24 to penetrate the first interlayer insulating film 13 and third interlayer insulating film 27. COPYRIGHT: (C)2009,JPO&INPIT