CIRCUIT SIMULATION METHOD FOR HIGH-WITHSTAND-VOLTAGE MOS TRANSISTOR

• Main Author: SAITO FUMITOSHI
• Format: Patent
• Language: English
• Published: 09.07.2009
• Subjects: BASIC ELECTRIC ELEMENTS; CALCULATING; COMPUTING; COUNTING; ELECTRIC DIGITAL DATA PROCESSING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PHYSICS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To achieve a model as a bidirectional MOS, and to improve simulation accuracy of high-withstand-voltage MOS. SOLUTION: Disclosed is a method in which a simulation is performed using a macro model for carrying out a simulation of a high-withstand-voltage MOSFET. The macro model...