NONVOLATILE MEMORY DEVICE

PROBLEM TO BE SOLVED: To provide a nonvolatile memory device including a sensing transistor having a high critical voltage. SOLUTION: The nonvolatile memory device includes at least one string including a plurality of memory cell transistors connected in series, at least one bit line corresponding t...

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Bibliographic Details
Main Authors PARK JU-HEE, SUNG JUNG-HUN
Format Patent
LanguageEnglish
Published 07.05.2009
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:PROBLEM TO BE SOLVED: To provide a nonvolatile memory device including a sensing transistor having a high critical voltage. SOLUTION: The nonvolatile memory device includes at least one string including a plurality of memory cell transistors connected in series, at least one bit line corresponding to the at least one string, and a sensing transistor including a gate for sensing the voltage of the bit line and the high critical voltage. The critical voltage of the sensing transistor is lower than a voltage applied to a read bit line connected to a memory cell transistor to be read, and higher than a voltage obtained by reducing a predetermined voltage from the voltage applied to the read bit line. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20080229577