TRANSISTOR, INTEGRATED CIRCUIT, AND INTEGRATED CIRCUIT FORMATION METHOD

PROBLEM TO BE SOLVED: To provide a transistor, an integrated circuit and a method for forming the integrated circuit. SOLUTION: There formed is a configuration having a gate electrode 23 disposed in a gate groove 27 formed on a semiconductor substrate 1 via a gate dielectric 24. The gate electrode 2...

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Bibliographic Details
Main Authors HARTWICH JESSICA, GRAHAM ANDREW, SCHOLZ ARND
Format Patent
LanguageEnglish
Published 11.12.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a transistor, an integrated circuit and a method for forming the integrated circuit. SOLUTION: There formed is a configuration having a gate electrode 23 disposed in a gate groove 27 formed on a semiconductor substrate 1 via a gate dielectric 24. The gate electrode 23 includes a conductive carbon material. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20080142718