SUBSTRATE PROCESSING METHOD, AND APPLICATION AND DEVELOPMENT PROCESSOR

• Main Authors: MATSUOKA TAKAAKI, INOKUCHI ATSUTOMO, OMI TADAHIRO
• Format: Patent
• Language: English
• Published: 21.08.2008
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; BLASTING; CINEMATOGRAPHY; DRYING; DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HEATING; HOLOGRAPHY; LIGHTING; MATERIALS THEREFOR; MECHANICAL ENGINEERING; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; WEAPONS

PROBLEM TO BE SOLVED: To remove a solvent included in resist without deforming the resist when treating a substrate after developing the resist on the substrate. SOLUTION: At an upper portion in a processing container 210, there is an ultraviolet-ray irradiation section 240 for irradiating a wafer W on a mount table 230 with ultraviolet rays having a wavelength of 120-190 nm. On the upper surface of the processing container 210, a gas supply port 220, which supplies inert gas into the processing container 210, is formed. On the lower surface of the processing container 210, an outlet 223, which exhausts an atmosphere in the processing container 210, is formed. The inert gas is supplied from the gas supply port 220, and the atmosphere inside the processing container 210 is exhausted from the outlet 223, thus maintaining the inside of the processing container 210 at an atmosphere without containing any oxygen atoms and water molecules. Under the atmosphere, the ultraviolet-ray irradiation section 240 irradiates the wafer W with ultraviolet rays. COPYRIGHT: (C)2008,JPO&INPIT