DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR

• Main Authors: SHIMIZU YOSHIMITSU, WATANABE KUNIHIKO, UEHARA JUNICHI
• Format: Patent
• Language: English
• Published: 21.08.2008
• Subjects: ADVERTISING; BASIC ELECTRIC ELEMENTS; CRYPTOGRAPHY; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; DISPLAY; DISPLAYING; EDUCATION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; LABELS OR NAME-PLATES; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEALS; SEMICONDUCTOR DEVICES; SIGNS; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PROBLEM TO BE SOLVED: To provide a display device that can avoid the generation of current leakage in a thin-film transistor. SOLUTION: The display device is provided with a gate signal wire, an insulating film, a semiconductor layer, and a conductor layer, which are stacked on a substrate in sequence. The conductor layer constitutes at least the drain electrode of a thin-film transistor, to be connected to a drain signal wire and the source electrode of the thin-film transistor to be connected to a pixel electrode. When viewed in a two-dimensional manner, the semiconductor layer is provided with a sidewall having a pattern that is located, at least inside the sidewall surface of the drain electrode at the end portion of the drain electrode. COPYRIGHT: (C)2008,JPO&INPIT