TEMPERATURE MEASURING METHOD AND TEMPERATURE MANAGEMENT METHOD FOR THERMAL TREATMENT DEVICE

• Main Authors: KAWASE FUMITOSHI, SHIBATA SATOSHI
• Format: Patent
• Language: English
• Published: 26.06.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a temperature measuring method of accurately finding a thermal processing temperature on the basis of a sheet resistance, and also to provide a temperature management method for a simple thermal processing device. SOLUTION: A plurality of silicon single-crystalline substrates 1 containing boron as an impurity doped therein are thermally treated at a plurality of temperatures lying in a temperature range between 900°C to 1,050°C, and a relationship between the sheet resistance of an impurity doped layer 11 and the thermal treatment temperature is acquired. The single-crystalline substrate 1 containing another impurity doped therein at a measurement target temperature included in the above temperature range is thermally treated, and then a sheet resistance of the impurity doped layer 11 of the silicon single-crystalline substrate 1 is measured. The measurement target temperature is found on the basis of the relationship between the sheet resistance and the thermal treatment temperature. COPYRIGHT: (C)2008,JPO&INPIT