POROGEN, POROGENATED PRECURSOR AND METHOD FOR USING THE SAME TO PROVIDE POROUS ORGANOSILICA GLASS FILM WITH LOW DIELECTRIC CONSTANT

• Main Authors: NORMAN JOHN A T, VINCENT JEAN LOUISE, XIAO MANCHAO, O'NEILL MARK LEONARD, LUKAS AARON SCOTT, VRTIS RAYMOND NICHOLAS
• Format: Patent
• Language: English
• Published: 16.08.2007
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a porous organosilica glass film which has a low dielectric constant, improved mechanical properties, thermal stability and chemical resistance. SOLUTION: The produced porous organosilica glass film has a composition expressed by the formula SivOwCxHyFz, wherein v+w+x+y+z=100%; v is 10 to 35 atom%; w is 10 to 65 atom%; x is 5 to 30 atom%; y is 10 to 50 atom%; and z is 0 to 15 atom%. The production method comprises the steps of: introducing a precursor selected from the group consisting of organosilane and organosiloxane, and a gaseous reagent containing the porogen into a vacuum chamber; and applying energy to the gaseous reagent to make the gaseous reagent react and form a preliminary film on a substrate. The preliminary film has pores. Substantially all of the porogen are removed so as to obtain the porous film with a dielectric constant of less than 2.6. COPYRIGHT: (C)2007,JPO&INPIT