METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

• Main Author: SATOU YASUYO
• Format: Patent
• Language: English
• Published: 12.07.2007
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide single crystal capable of obtaining a high quality single crystal by suppressing the propagation of defects and strain present in the seed crystal. SOLUTION: By successively implementing a process for reducing the diameter of a seed crystal by sublimating and etching the side and outer edge of the seed crystal in which a large number of defects and strain are present and a process for growing a single crystal where the seed crystal with a reduced diameter is enlarged to a desired size, the propagation of defects and strain derived from the outer edge of a seed crystal can be suppressed and a high quality silicon carbide single crystal can be manufactured. COPYRIGHT: (C)2007,JPO&INPIT