METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide single crystal capable of obtaining a high quality single crystal by suppressing the propagation of defects and strain present in the seed crystal. SOLUTION: By successively implementing a process for reducing the diameter...
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Format | Patent |
Language | English |
Published |
12.07.2007
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Abstract | PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide single crystal capable of obtaining a high quality single crystal by suppressing the propagation of defects and strain present in the seed crystal. SOLUTION: By successively implementing a process for reducing the diameter of a seed crystal by sublimating and etching the side and outer edge of the seed crystal in which a large number of defects and strain are present and a process for growing a single crystal where the seed crystal with a reduced diameter is enlarged to a desired size, the propagation of defects and strain derived from the outer edge of a seed crystal can be suppressed and a high quality silicon carbide single crystal can be manufactured. COPYRIGHT: (C)2007,JPO&INPIT |
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AbstractList | PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide single crystal capable of obtaining a high quality single crystal by suppressing the propagation of defects and strain present in the seed crystal. SOLUTION: By successively implementing a process for reducing the diameter of a seed crystal by sublimating and etching the side and outer edge of the seed crystal in which a large number of defects and strain are present and a process for growing a single crystal where the seed crystal with a reduced diameter is enlarged to a desired size, the propagation of defects and strain derived from the outer edge of a seed crystal can be suppressed and a high quality silicon carbide single crystal can be manufactured. COPYRIGHT: (C)2007,JPO&INPIT |
Author | SATOU YASUYO |
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RelatedCompanies | MATSUSHITA ELECTRIC IND CO LTD |
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Snippet | PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide single crystal capable of obtaining a high quality single crystal by suppressing... |
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SubjectTerms | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
Title | METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL |
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