INDUCTIVELY COUPLED PLASMA REACTOR AND ITS METHOD

• Main Authors: ARNOLD JOHN C, HARTIG MICHAEL J
• Format: Patent
• Language: English
• Published: 05.04.2007
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide an inductively coupled high frequency plasma reactor and method of processing a semiconductor wafer. SOLUTION: An inductively coupled high frequency plasma reactor 10 is provided with a plasma source 16 having multiple channels 38, 44, to each of which a raw gas is i...