VERTICAL HALL ELEMENT, AND METHOD OF ADJUSTING MAGNETISM-SENSING-SENSIBILITY THEREOF

PROBLEM TO BE SOLVED: To provide a vertical Hall element and a method of adjusting magnetism-sensing-sensibility thereof whereby the circuit relative to the Hall element can be simplified with the structure, whereby the sensibility adjustment of the Hall element of a magnetism sensing element can be...

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Main Author YOGO YUKIAKI
Format Patent
LanguageEnglish
Published 01.02.2007
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Abstract PROBLEM TO BE SOLVED: To provide a vertical Hall element and a method of adjusting magnetism-sensing-sensibility thereof whereby the circuit relative to the Hall element can be simplified with the structure, whereby the sensibility adjustment of the Hall element of a magnetism sensing element can be performed more easily and more properly than conventional ones. SOLUTION: In addition to the separating walls (p-type diffusion layers 14a, 14b) for partitioning electrically a magnetism sensor (hall plate) HP, electrodes ED1, ED2 comprising p-type diffusion layers are provided in a substrate as a portion of the Hall element. Then, the shape of the magnetism sensor HP is made variable in response to the potential of these electrodes ED1, ED2, via the variation of the width of the depletion layer formed between an n-type semiconductor region 12 and the p-type electrodes ED1, ED2. COPYRIGHT: (C)2007,JPO&INPIT
AbstractList PROBLEM TO BE SOLVED: To provide a vertical Hall element and a method of adjusting magnetism-sensing-sensibility thereof whereby the circuit relative to the Hall element can be simplified with the structure, whereby the sensibility adjustment of the Hall element of a magnetism sensing element can be performed more easily and more properly than conventional ones. SOLUTION: In addition to the separating walls (p-type diffusion layers 14a, 14b) for partitioning electrically a magnetism sensor (hall plate) HP, electrodes ED1, ED2 comprising p-type diffusion layers are provided in a substrate as a portion of the Hall element. Then, the shape of the magnetism sensor HP is made variable in response to the potential of these electrodes ED1, ED2, via the variation of the width of the depletion layer formed between an n-type semiconductor region 12 and the p-type electrodes ED1, ED2. COPYRIGHT: (C)2007,JPO&INPIT
Author YOGO YUKIAKI
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Snippet PROBLEM TO BE SOLVED: To provide a vertical Hall element and a method of adjusting magnetism-sensing-sensibility thereof whereby the circuit relative to the...
SourceID epo
SourceType Open Access Repository
SubjectTerms ELECTRICITY
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
Title VERTICAL HALL ELEMENT, AND METHOD OF ADJUSTING MAGNETISM-SENSING-SENSIBILITY THEREOF
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