METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To form a Ti silicide layer with low resistance even on a substrate having low heat resistance. SOLUTION: The Ti silicide layer with the low resistance is formed even on the substrate having low heat resistance by using a laser beam in a heat treatment process of the Ti silicid...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | English |
Published |
18.01.2007
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!