METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To change the intrinsic stress after forming a stress control film in a method for manufacturing a semiconudctor device for forming the stress control film that generates the stress in a channel forming region of a field effect transistor formed on the surface of the substrate....

Full description

Saved in:
Bibliographic Details
Main Authors NOBE YOSHIFUMI, UDO TSUTOMU
Format Patent
LanguageEnglish
Published 11.01.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To change the intrinsic stress after forming a stress control film in a method for manufacturing a semiconudctor device for forming the stress control film that generates the stress in a channel forming region of a field effect transistor formed on the surface of the substrate. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of forming the stress control film on the field effect transistor, and changing an intrinsic stress of the stress control film by providing a heat treatment, or a plasma processing with ammonia or hydrogen to change the whole or a part of the material of the stress control film. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20050185116